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| Datasheet File OCR Text: |
| Transys Electronics LIMITED TO-126 Plastic-Encapsulated Transistors BD135/BD137/BD139 FEATURES Power dissipation PCM: 1.25 W (Tamb=25) 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (NPN) TO-126 Collector current 1.5 A ICM: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol 123 unless otherwise specified) Test conditions BD135 MIN TYP MAX UNIT 45 60 80 45 60 80 5 0.1 10 25 40 40 25 0.5 1 V V V A A V V Collector-base breakdown voltage V(BR)CBO Ic=100A, IE=0 BD137 BD139 BD135 Collector-emitter breakdown voltage V(BR)CEO Ic=30mA, IB=0 BD137 BD139 Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)EBO ICBO IEBO hFE(1) IE=100A, IC=0 VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA BD135 250 160 DC current gain hFE(2) VCE=2V, IC=150mA BD137/BD139 hFE(3) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA CLASSIFICATION OF hFE(2) Rank Range 6 40-100 10 63-160 16 100-250 |
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